HSI Thick Film Specifications
Substrates
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Alumina ( ), typical 96% but available from 91-99.6%)
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BeO (Beryllium Oxide)
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AlN (Aluminum Nitride)
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Exotic substrates (Ferrite, Quartz, Pink Diamonite, Lithium Niobate, Sapphire)
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Thicknesses: 5-100 mils (0.005” - 0.100”), 25 mils typical
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Size: up to 12” square (305mm)
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Shapes: All shapes available; CO2 Numerically Controlled Laser allows any shapes and sizes
Al O
2
3
The selection of substrate is based on numerous factors including thermal conductivity, cost, dielectric power dissipation, and environmental considerations:
Property
Units
Alumina
AlN
BeO
Dielectric Constant (1MHz @ RT)
Dielectric loss (1MHz @ RT)
-
-
9.8
0.0001
8.9
0.0005
6.7
0.004
Electrical Resistivity
Ohm-cm
>10
14
>10
14
14
Thermal conductivity @ T=.040 in.
W/m K
36
170-190
260
Coefficient of Thermal Expansion
ppm/ºC
8.2
4.6
8.5
Density
g/cm
2.89
3.3
3.85
Bending Strength
Hardness (knoop)
mPa
GPa
380
14.1
290
11.8
230
9.8
Youngs Modulus
GPa
372
331
345
3
>10
Conductors
Common conductors listed; other alloys available -
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Screened Gold
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0.005” lines and spaces: 4 milliohms / □ resistivity
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Wire bondable
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Low resistance runs
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Etched 99.9% Gold
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0.001” lines and spaces: 2.8 milliohms / □ resistivity
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Outstanding performance to 80 GHz
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Wire bondable
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Platinum/gold
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0.005” lines and spaces: 80 milliohms / □ resistivity
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Solderable (excellent aged adhesion with no migration)
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Wire bondable
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Palladium/silver
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0.005” lines and spaces: 35 milliohms / □ resistivity
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Solderable (good aged adhesion general purpose)
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Wire bondable
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Silver
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0.005” lines and spaces: 3 milliohms / □ resistivity
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Aluminum wire bondable
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Print-through holes
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0.006" diameter (1/3 substrate thickness)
Resistors
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Laser trimming, solder dipping
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Load life: 1,000 hours
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Stability >0.3% total (less than 0.3% drift from all environmental factors: Laser Trim, Solder Dip, 1,000-hour Load Life, temperature cycling, etc.)
Resistance Range
TCR
Tolerance
Power Density
< 20 ohms
20Ω to 100K ohm
±100 ppm/ºC
±50 ppm/ºC
±0.25%
100K Ω to 100M ohms
±100 ppm/ºC
100M Ω to 2G ohms
±250 ppm/ºC
100 watts/in dissipation
2
±0.50%
200 watts/in dissipation
2
±0.50%
±2.00%
50 watts/in dissipation
2
50 watts/in dissipation
2
Dielectric
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Dielectric breakdown > 400 AC Volts/mil.
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Low K dielectric allows up to 12 conductor layers (K=6, breakdown >400 VAC)
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High K dielectric allows capacitor formation (0.1 µF/in2 maximum)
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Ultra-low Loss dielectric available for microwave applications
Assembly
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Solder Reflow
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Leadless chip carriers, S.O. (Small Outline) Packages, Discrete devices, Capacitors, Inductors
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Chip and Wire
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0.0007" to 0.002" (0.7 to 2 mils) Gold thermosonic ball bonding
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Epoxy and Eutectic die attach
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Moly tab high temperature solder mount
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0.001" to 0.010" (1 to 10 mils) Aluminum ultrasonic wedge bonding
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Packaging
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Hermetic packages: welded Metal cans, soldered Ceramic
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Epoxy sealed Ceramic and Plastic enclosures, custom shapes
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Conformally Coated Epoxy or Silicone DIPs and SIPs
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Standard and Custom fabricated Heat Sinks
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Discrete Components
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Semiconductors:
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Bipolar, ECL, MOS Gate Arrays, FETs
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Capacitors:
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Chip: 5pF to 0.5uF, NPO through Z5U, up to 50V
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Tantalum Capacitors: 0.1uF to 50uF, up to 25V
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Variable Capacitors: 1 pF to 100 pF
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Resistors:
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Chip: Thin Film, tight tolerance, low TCR
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Inductors & Chip Inductors:
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Standard products and custom-wound cores are available
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